PART |
Description |
Maker |
IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门)) From old datasheet system TMOS POWER FET 27 AMPERES TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. ON Semiconductor
|
IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
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General Electric Solid State GE Solid State
|
MTM2N50 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc.
|
MRF1511N |
RF Power Field Effect Transistor
|
Freescale Semiconductor...
|
MTP12N10L |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
CMT02N60GN252 CMT02N60XN252 CMT02N6010 CMT02N60GN2 |
POWER FIELD EFFECT TRANSISTOR
|
Champion Microelectronic Corp. Champion Microelectronic Co... Champion Microelectroni...
|
MTH6N60 MTH6N55 |
Power Field Effect Transistor
|
New Jersey Semi-Conduct...
|
MTP2N80 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
D84DN2 D84DM2 |
FIELD EFFECT POWER TRANSISTOR
|
New Jersey Semi-Conduct...
|